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| SPICE Device Model SI4569DY Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET CHARACTERISTICS * N- and P-Channel Vertical DMOS * Macro Model (Subcircuit Model) * Level 3 MOS * Apply for both Linear and Switching Application * Accurate over the -55 to 125C Temperature Range * Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 74183 S-60744Rev. A, 08-May-06 www.vishay.com 1 SPICE Device Model SI4569DY Vishay Siliconix SPECIFICATIONS (TJ = 25C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A VDS = 5 V, VGS = 10 V VDS = -5 V, VGS = -10 V VGS = 10 V, ID = 6 A Drain-Source On-State Resistancea rDS(on) VGS = -10 V, ID = -6 A VGS = 4.5 V, ID = 4.8 A VGS = -4.5 V, ID = -4.9 A Forward Transconductancea gfs VDS = 15 V, ID = 6 A VDS = -15 V, ID = -6 A IS = 1.5 A IS = -1.6 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 1.2 1.8 224 205 0.021 0.023 0.026 0.031 17 37 0.80 0.80 0.022 0.026 0.024 0.031 20 17 0.73 -0.73 S V Symbol Test Condition Simulated Data Measured Data Unit On-State Drain Currenta ID(on) A Diode Forward Voltagea VSD V Dynamicb VDS = 20 V, VGS = 10 V, ID = 5 A Total Gate Charge Qg VDS = -20 V, VGS = -10 V, ID = -5 A N-Ch P-Ch N-Ch N-Channel VDS = 20 V, VGS = 4.5 V, ID = 5 A P-Channel VDS = -20 V, VGS = -4.5 V, ID = -5 A P-Ch N-Ch P-Ch N-Ch P-Ch 17 34 8.8 20 2.3 4.5 3.2 9.2 21 41 9.6 21 2.3 4.5 3.2 9.2 nC Gate-Source Charge Qgs Gate-Source Charge Qgs Notes a. Pulse test; pulse width 300 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 74183 S-60744Rev. A, 08-May-06 SPICE Device Model SI4569DY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25C UNLESS OTHERWISE NOTED) N-Channel MOSFET Document Number: 74183 S-60744Rev. A, 08-May-06 www.vishay.com 3 SPICE Device Model SI4569DY Vishay Siliconix P-Channel MOSFET www.vishay.com 4 Document Number: 74183 S-60744Rev. A, 08-May-06 |
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